论文标题
替代VSN纳米分散在MOS $ _2 $ for Pt-Scalable催化剂
Substitutional VSn nanodispersed in MoS$_2$ film for Pt-scalable catalyst
论文作者
论文摘要
在过渡金属二分法（TMDC）作为基于PT的催化剂的替代品中，金属-TMDCS催化剂具有高反应性的基底平面，但不稳定。同时，化学稳定的半导体-TMDC由于其基底平面而显示出极限的催化活性。在这里，我们提出在半导体MOS2膜（V-MOS2）中作为有效催化剂中的硫化金属钒（VSN）纳米分散。在合成过程中，将钒原子取代为六角形单层MOS2，形成随机分布的VSN单元。 Cu电极上的V-MOS2膜表现出PT-Scalable催化性能。电流密度在0.6 V时为1000 mA CM-2，电势为-0.06 V，电流密度为10 mA cm-2，在0 V时交换了0.65 mA CM-2的电流密度为0.65 mA cm-2，具有出色的循环循环稳定性（她）。具有最佳的gibbs自由能（-0.02 eV）的有效电子转移来解释她的V-MOS2的高固有性能。这项研究增加了对在原子水平上设计TMDC的方法，以增强氢进化的固有催化活性。
Among transition metal dichalcogenides (TMdCs) as alternatives for Pt-based catalysts, metallic-TMdCs catalysts have highly reactive basal-plane but are unstable. Meanwhile, chemically stable semiconducting-TMdCs show limiting catalytic activity due to their inactive basal-plane. Here, we propose metallic vanadium sulfide (VSn) nanodispersed in a semiconducting MoS2 film (V-MoS2) as an efficient catalyst. During synthesis, vanadium atoms are substituted into hexagonal monolayer MoS2 to form randomly distributed VSn units. The V-MoS2 film on a Cu electrode exhibits Pt-scalable catalytic performance; current density of 1000 mA cm-2 at 0.6 V, overpotential of -0.06 V at a current density of 10 mA cm-2 and exchange current density of 0.65 mA cm-2 at 0 V with excellent cycle stability for hydrogen-evolution-reaction (HER). The high intrinsic HER performance of V-MoS2 is explained by the efficient electron transfer from the Cu electrode to chalcogen vacancies near vanadium sites with optimal Gibbs free energy (-0.02 eV). This study adds insight into ways to engineer TMdCs at the atomic-level to boost intrinsic catalytic activity for hydrogen evolution.
