论文标题
硅中近红外单光子发射器的广泛多样性
Broad diversity of near-infrared single-photon emitters in silicon
论文作者
论文摘要
我们报告了属于七个不同家族的光学活性点缺陷的硅中的单个发射器的检测。这些荧光中心是通过碳植入通常用于集成光子学的商业硅晶片的碳植入而产生的。在[1.1,1.55] - $μ$ m的范围内显示了单个光子发射，跨越了O-和C-Tecom频段。我们分析了它们的光致发光光谱，偶极发射和10K的光学弛豫动力学。对于一个特定的家族，我们显示出从10K到温度远高于77K液体氮温度的饱和度时恒定的发射强度。鉴于对硅中纳米型和整合的高级控制，这些新型的人造原子是基于SI的量子技术的有前途的候选者。
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon implantation of a commercial silicon-on-insulator wafer usually employed for integrated photonics. Single photon emission is demonstrated over the [1.1,1.55]-$μ$m range, spanning the O- and C-telecom bands. We analyse their photoluminescence spectrum, dipolar emission and optical relaxation dynamics at 10K. For a specific family, we show a constant emission intensity at saturation from 10K to temperatures well above the 77K-liquid nitrogen temperature. Given the advanced control over nanofabrication and integration in silicon, these novel artificial atoms are promising candidates for Si-based quantum technologies.
