论文标题
高速运力的电子结构二维抗铁磁金属GDTE $ _3 $
Electronic structure of the high-mobility two-dimensional antiferromagnetic metal GdTe$_3$
论文作者
论文摘要
新发现的二维抗铁磁GDTE $ _3 $，由于其在所有已知的层次磁性材料中的最高载流子迁移率以及其潜在的新型磁性互联网和自旋型设备的应用。在这里，我们使用了高分辨率角度分辨光发射光谱来研究其费米表面拓扑结构和低洼的电子带结构。费米表面部分被电荷密度波以低于过渡温度的电荷波，而残余部分重建使GDTE $ _3 $ METALLIC。高载流子迁移率可以归因于费米能量附近的锋利和几乎线性带分散。我们发现，Fermi能量附近的线性带的散射速率几乎是线性的，这表明GDTE $ _3 $是一种非Fermi液体金属。我们在本文中的结果提供了对这种分层的范德华抗铁磁材料的基本理解，以指导未来的研究。
The new-found two-dimensional antiferromagnetic GdTe$_3$ is attractive owing to its highest carrier mobility among all known layered magnetic materials, as well as its potential application for novel magnetic twistronic and spintronic devices. Here, we have used high-resolution angle-resolved photoemission spectroscopy to investigate its Fermi surface topology and low-lying electronic band structure. The Fermi surface is partially gapped by charge density wave below the transition temperature, the residual part reconstructs making GdTe$_3$ metallic. The high carrier mobility can be attributed to the sharp and nearly linear band dispersions near the Fermi energy. We find that the scattering rate of the linear band near the Fermi energy is almost linear within a wide energy range, indicating that GdTe$_3$ is a non-Fermi liquid metal. Our results in this paper provide a fundamental understanding of this layered Van der Waals antiferromagnetic materials to guide future studies on it.
