论文标题
使用量子网络模型计算分支半导体纳米结构中电子传输的计算
Calculation of electron transport in branched semiconductor nanostructures using quantum network model
论文作者
论文摘要
分支半导体纳米结构中的电子传输为创建新设备提供了许多可能性。我们使用量子网络模型解决了其计算的问题。所提出的方案由三个计算部分：网络连接的S-矩阵，网络的S-矩阵，就其连接的S-矩阵，基于其S-matrix通过网络的电流而言。为了计算网络交界处的S-矩阵，我们提出了以清晰的全差异形式的散射边界条件。作为替代方案，我们还考虑了Dirichlet到Neumann和Neumann到Dirichlet地图方法。为了根据其连接的S-矩阵来计算网络的S-矩阵，我们获得了一个组合公式的网络。我们在Landauer $-Büttiker形式主义的框架内通过网络找到电流。到处进行计算，我们使用扩展的散射矩阵，可以正确考虑连接之间的隧道效应的贡献。我们通过基于二维电子气体对纳米结构进行建模来证明提出的计算方案。为此，我们提供了一个由一个，两个和三个相邻分支的平滑连接形成的网络模型。我们根据温度来计算由四个连接形成的这种网络的电性能（按GAA的示例）。
Electron transport in branched semiconductor nanostructures provides many possibilities for creating fundamentally new devices. We solve the problem of its calculation using a quantum network model. The proposed scheme consists of three computational parts: S-matrix of the network junction, S-matrix of the network in terms of its junctions' S-matrices, electric currents through the network based on its S-matrix. To calculate the S-matrix of the network junction, we propose scattering boundary conditions in a clear integro-differential form. As an alternative, we also consider the Dirichlet-to-Neumann and Neumann-to-Dirichlet map methods. To calculate the S-matrix of the network in terms of its junctions' S-matrices, we obtain a network combining formula. We find electrical currents through the network in the framework of the Landauer$-$Büttiker formalism. Everywhere for calculations, we use extended scattering matrices, which allows taking into account correctly the contribution of tunnel effects between junctions. We demonstrate the proposed calculation scheme by modeling nanostructure based on two-dimensional electron gas. For this purpose we offer a model of a network formed by smooth junctions with one, two and three adjacent branches. We calculate the electrical properties of such a network (by the example of GaAs), formed by four junctions, depending on the temperature.
