论文标题

位错诱导的y分离在Mg中的基底晶体界面处

Dislocation-induced Y segregation at basal-prismatic interfaces in Mg

论文作者

Huang, Zhifeng, Turlo, Vladyslav, Wang, Xin, Chen, Fei, Shen, Qiang, Zhang, Lianmeng, Beyerlein, Irene J., Rupert, Timothy J.

论文摘要

已广泛研究了MG中双边界处的溶质分离,但是在同样重要的基础晶体界面上尚未研究这种现象。为了填补这一关键的空白,这项工作调查了使用原子模拟的各种结构的基础晶体界面上y的隔离行为。计算出的界面能表明,短相干界面和含有脱节和位错的长度连贯界面和长度半耦合界面比无序的界面更稳定,这得到了我们的实验观察结果的支持。 Y在这些最低能量基底丙并且界面上的隔离能与原子静水压力明显相关,这突出了局部压缩应力对隔离的重要性。此外,在半相结合基础顶点界面处的位置周围位置表明较低的隔离能,表明诸如界面错位之类的局部缺陷可以进一步增强分离。整个研究中,这项研究表明,溶质的分离可能会受到MG合金中复杂界面的局部结构的多个不同方面的影响。

Solute segregation at twin boundaries in Mg has been widely investigated, yet this phenomenon has not been studied at the equally important basal-prismatic interfaces. To fill this critical gap, this work investigates the segregation behavior of Y at basal-prismatic interfaces with various structures using atomistic simulations. The calculated interfacial energies show that short coherent interfaces and long semi-coherent interfaces containing disconnections and dislocations are more energetically stable than disordered interfaces, which is supported by our experimental observations. The segregation energy of Y at these lowest energy basal-prismatic interfaces shows a clear correlation with the atomic hydrostatic stress, highlighting the importance of local compressive stresses for segregation. In addition, sites around dislocations at the semi-coherent basal-prismatic interfaces demonstrate lower segregation energy, indicating that local defects such as interfacial dislocations can further enhance the segregation. In its entirety, this study indicates that the segregation of solutes can be affected by a number of different aspects of the local structure at complex interfaces in Mg alloys.

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