论文标题

在节点线半明Zrsite中超快照相诱导的LIFSHITTINE的签名

Signature of an Ultrafast Photo-Induced Lifshitz Transition in the Nodal-Line Semimetal ZrSiTe

论文作者

Kirby, Robert J., Muechler, Lukas, Klemenz, Sebastian, Weinberg, Caroline, Ferrenti, Austin, Oudah, Mohamed, Fausti, Daniele, Scholes, Gregory D., Schoop, Leslie M.

论文摘要

在这里,我们报告了一项超快光谱研究,对淋巴结半明确zrsite。我们的测量结果表明,与家族的其他化合物交谈,电子激发的突然注入会导致$ a_ {1g} $ phonon模式的强烈连贯响应,从而动态修改了ZR和TE原子和SI层之间的距离。 “冷冻的声子” DFT计算,其中将带结构计算为沿声子模式坐标的核位置的函数,表明沿此模式的大型位移显着改变了材料的电子结构,迫使频带接近甚至越过费米能。时间域响应的不相干部分表明,低通量处的延迟电子响应不连续地演变成瞬时的,以使激发密度大于$ 3.43 \ times 10^{17} $ cm $ $^{ - 3} $。电子激发的耗散通道的这种突然变化表明了超快的lifshittion跃迁,我们暂时将其与Fermi表面的拓扑变化相关联,该拓扑的变化是由保留$ A_ {1G} $ Phonon模式的对称性驱动的Fermi表面的变化。

Here we report an ultrafast optical spectroscopic study of the nodal-line semimetal ZrSiTe. Our measurements reveal that, converse to other compounds of the family, the sudden injection of electronic excitations results in a strongly coherent response of an $A_{1g}$ phonon mode which dynamically modifies the distance between Zr and Te atoms and Si layers. "Frozen phonon" DFT calculations, in which band structures are calculated as a function of nuclear position along the phonon mode coordinate, show that large displacements along this mode alter the material's electronic structure significantly, forcing bands to approach and even cross the Fermi energy. The incoherent part of the time domain response reveals that a delayed electronic response at low fluence discontinuously evolves into an instantaneous one for excitation densities larger than $3.43 \times 10^{17}$ cm$^{-3}$. This sudden change of the dissipative channels for electronic excitations is indicative of an ultrafast Lifshitz transition which we tentatively associate to a change in topology of the Fermi surface driven by a symmetry preserving $A_{1g}$ phonon mode.

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