论文标题
带有完全可调的自旋轨道耦合的Si FinFet中的孔自旋Qubits和带电荷噪声的甜点
Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise
论文作者
论文摘要
孔旋转量子位中强的自旋轨道耦合可实现快速和电气可调的大门，但同时又可以增强量子的敏感性。在半导体量子计算中，抑制这种噪声是一个重大挑战。在这里，我们从理论上说明了Si FinFets不仅与现代CMOS技术兼容，而且它们呈现了可操作的甜点，其中充电噪声被完全删除。这些甜点的存在是材料各向异性与鳍片横截面的三角形形状之间的相互作用的结果，并且不需要对设备静电的极端微调。我们介绍了甜点如何出现在沿不同晶体学轴上生长的鳍片中，并详细研究了当横截面面积和纵横比变化时，这些设备的行为如何变化。我们确定最大化量子性能的设计，并可以为基于可扩展的旋转量子计算机铺平道路。
The strong spin-orbit coupling in hole spin qubits enables fast and electrically tunable gates, but at the same time enhances the susceptibility of the qubit to charge noise. Suppressing this noise is a significant challenge in semiconductor quantum computing. Here, we show theoretically that hole Si FinFETs are not only very compatible with modern CMOS technology, but they present operational sweet spots where the charge noise is completely removed. The presence of these sweet spots is a result of the interplay between the anisotropy of the material and the triangular shape of the FinFET cross-section, and it does not require an extreme fine-tuning of the electrostatics of the device. We present how the sweet spots appear in FinFETs grown along different crystallographic axes and we study in detail how the behaviour of these devices change when the cross-section area and aspect ratio are varied. We identify designs that maximize the qubit performance and could pave the way towards a scalable spin-based quantum computer.
