论文标题

在非磁性导体中产生拓扑异常效应

Generating a topological anomalous Hall effect in a non-magnetic conductor

论文作者

Cullen, James H., Bhalla, Pankaj, Marcellina, Elizabeth, Hamilton, Alexander R., Culcer, Dimitrie

论文摘要

普通的大厅效应是由洛伦茨力量驱动的,而其异常的效果发生在铁磁体中。在这里,我们表明,非磁性2D Spin-3/2孔的浆果曲率单子导致在应用的平面内磁场B_X中导致新的大厅效应线性。没有洛伦兹的力量,因此没有普通的大厅效应,而所有疾病的贡献都消失了B_X中的领先顺序。我们称这种固有现象为异常的平面霍尔效应(APHE),它提供了直接在P型半导体中直接访问的拓扑传输的非量化足迹。

The ordinary Hall effect is driven by the Lorentz force, while its anomalous counterpart occurs in ferromagnets. Here we show that the Berry curvature monopole of non-magnetic 2D spin-3/2 holes leads to a novel Hall effect linear in an applied in-plane magnetic field B_x. There is no Lorentz force hence no ordinary Hall effect, while all disorder contributions vanish to leading order in B_x. This intrinsic phenomenon, which we term the anomalous planar Hall effect (APHE), provides a non-quantized footprint of topological transport directly accessible in p-type semiconductors.

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