论文标题
过渡金属二分法元素杂质莫伊尔莫伊尔超级晶格中的金属绝缘体过渡
Metal-insulator transition in transition metal dichalcogenide heterobilayer moiré superlattices
论文作者
论文摘要
在二维半导体杂波中形成的Moiré超晶格提供了一个新的Hubbard模型物理学实现，其中可以随意调整每个有效原子的电子数量。我们报告了对半填充狭窄的莫伊尔带的电子特性的精确对角线化研究，其中相关强度通过改变扭曲角度或相互作用强度而变化。我们为双层构建一个相图，确定金属 - 绝缘体相变发生的位置，估计绝缘阶段的电荷差距的大小，并评论过渡的性质和亚显性相互作用参数的重要性。
Moiré superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. We report on an exact diagonalization study of the electronic properties of half-filled narrow moiré bands in which correlation strengths are varied by changing twist angles or interaction strengths. We construct a phase diagram for the bilayer, identifying where the metal-insulator phase transition occurs, estimating the sizes of the charge gaps in the insulating phase, and commenting on the nature of the transition and the importance of sub-dominant interaction parameters.
