论文标题
$ p \！ - \！n $ - 连接二极管行为的测量在大信号和高频下
Measurement of $p\!-\!n$-junction diode behavior under large signal and high frequency
论文作者
论文摘要
二极管动态电导和动态电容的测量值最高为$ 10 \ timesτ_{p，n}^{ - 1} $，以及伏振幅升级升级TP 100 mV，并使用精确的Impedancemeter进行。将结果与以$ p \！ - \！n $ junctions的光谱方法获得的理论表达式进行了比较。该实验确认具有实际感兴趣，因为可以使用该理论提取设备参数，例如：放松时间$τ_{p，n} $和连接注入系数。进行这些实验以测试常规$ p \！ - \！n $接口理论的扩展。
Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10 \times τ_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p\!-\!n$-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time $τ_{p,n}$, and junction injection coefficient. These experiments were carried to test the extension of the conventional $p\!-\!n$-junction theory.
