论文标题
铅的结构，介电，电气和能量存储特性免费ba $ _ {0.975} $ la $ _ {0.017} $（zrxti $ _ {0.95-x} $ _ {0.95-x} $）sn $ _ {0.05}
Structural, dielectric, electrocaloric, and energy storage properties of lead free Ba$_{0.975}$La$_{0.017}$(ZrxTi$_{0.95-x}$)Sn$_{0.05}$O$_3$ (x = 0.05; 0.20) ceramics
论文作者
论文摘要
a站点不足的ba $ _ {0.975} $ la $ _ {0.017} $（zrxti $ _ {0.95-x} $）sn $ _ {0.05} $ _ {0.05} $ o $ $ _3 $（x = 0.05; 0.05; 0.20）ceramics（blaz100xts）使用该固体反应。微观结构研究表明，研究陶瓷的高密度和低孔隙度。此外，在所研究的化合物中观察到晶粒尺寸低于1.5千分尺，这是由于稀有地球元素（灯笼）的掺入所致。 X射线衍射和拉曼研究表明，Blaz5ts和Blaz20Ts在钙钛矿型结构中分别结晶，分别具有四方和立方对称性。介电研究表明，BLAZ5TS的正常铁电 - - 偏移相变，而对于BLAZ20TS样品来说是弥漫相变的。能量储存密度和相关的能量效率是根据P-E环与温度确定的，并且计算值与BCZT系统获得的结果相当。此外，通过间接方法计算绝热温度变化（Delta）t，并在Blaz5ts系统中获得（delta）T/（delta）E = 0.2 10-6 k m/v的相对较高的值。同时存在储能特性和电位响应性，使该系统成为在电子设备中应用的有希望的环保候选者。
A-site deficient Ba$_{0.975}$La$_{0.017}$(ZrxTi$_{0.95-x}$)Sn$_{0.05}$O$_3$ (x = 0.05; 0.20) ceramics (BLaZ100xTS) were synthesized using the solid-state reaction. The microstructural study revealed a high density and low porosity in the studied ceramics. Besides, grain size lower than 1.5 micrometer was observed in the studied compounds, which is due to the incorporation of the rare earth element (lanthanum). X-ray diffraction and Raman studies revealed that BLaZ5TS and BLaZ20TS crystallize in a perovskite-type structure with tetragonal and cubic symmetry, respectively. The dielectric study showed a normal ferroelectric-paraelectric phase transition for BLaZ5TS while a diffuse phase transition is noticed for BLaZ20TS sample. The energy-storage density and the associated energy efficiency were determined from the P-E loops versus temperature and the calculated values are comparable with results obtained on BCZT systems. Furthermore, the adiabatic temperature change (Delta)T was calculated through the indirect method and a relatively high value of (Delta)T/(Delta)E = 0.2 10-6 K m/V is obtained in BLaZ5TS system. The simultaneous presence of energy storage property and electrocaloric responsivity makes this system a promising environmentally friendly candidate for application in electronic devices.
