论文标题
浅NV中心通过利用N型钻石增强
Shallow NV centers augmented by exploiting n-type diamond
论文作者
论文摘要
在钻石的纳米级表面区域创建氮 - 呈（NV）中心，同时保留其出色的自旋和光学特性，对于量子技术的应用至关重要。在这里，我们演示了旋转时间时间（$ \ it {t} $$ {_ 2} $）的延长，充电状态的稳定以及以$ \ sim $ \ sim $ \ sim $ 15 nm $ 15 nm $ 15 nm $ 15 nm $ 15 nm $ \ sim phosphorus-pop-pop-pop dop n n-diaond diamond diaond the-sim $ \ sim $ \ sim $ \ sim $ \ sim $ \ sim $ \ sim的NV中心的创造产量提高。最长的$ \ it {t} $$ {_ 2} $，约580美元的浅NV中心接近散装钻石中的一个，该钻石限制了自然丰富的$^{13} $ c的核自旋。 N型钻石中的平均$ \ it {t} $$ {_ 2} $比纯非掺杂钻石中的1.7倍以上。此外，确认了电荷状态的稳定和产生产量的两倍以上。 N型钻石 - 钻石 - 气管导体中浅NV中心的增强功能对于将来的集成量子设备非常重要。
Creation of nitrogen-vacancy (NV) centers at the nanoscale surface region in diamond, while retaining their excellent spin and optical properties, is essential for applications in quantum technology. Here, we demonstrate the extension of the spin-coherence time ($\it{T}$${_2}$), the stabilization of the charge state, and an improvement of the creation yield of NV centers formed by the ion-implantation technique at a depth of $\sim$15 nm in phosphorus-doped n-type diamond. The longest $\it{T}$${_2}$ of about 580 $μ$s of a shallow NV center approaches the one in bulk diamond limited by the nuclear spins of natural abundant $^{13}$C. The averaged $\it{T}$${_2}$ in n-type diamond is over 1.7 times longer than that in pure non-doped diamond. Moreover, the stabilization of the charge state and the more than twofold improvement of the creation yield are confirmed. The enhancements for the shallow NV centers in an n-type diamond-semiconductor are significant for future integrated quantum devices.
