论文标题
使用双频率混合综合半导体 - 二电动波导激光器的高纯度微波生成
High-purity microwave generation using a dual-frequency hybrid integrated semiconductor-dielectric waveguide laser
论文作者
论文摘要
我们提出了一个集成的半导体 - 二元混合双频激光，在微波炉和Terahertz（THZ）生成的1.5 $ $ M波长范围内运行。在11 GHz附近产生微波搏动频率，我们观察到记录的纳罗内在线宽低至约2 kHz。这是通过基于磷酸二二极管放大器（INP）的混合整合而实现的，其长，低损坏的氮化硅（Si $ _3 $ n $ _4 $）的反馈电路可以扩展Cavity Photon LifeTime，从而延长了Cavity Phottrip的圆形圆形长度，约为30 cm的切碎。通过引入一个外部控制参数来平衡SI $ _3 $ _3 $ n $ _4 $芯片上的两个可调频率选择性的vernier镜子，以平衡两个可调的，频率选择性的vernier镜子，从而启用了两个频率的同时激光。每个频率都可以用大约80 nm的波长调节，可能允许在微波范围内生成广泛的频率至THZ范围。
We present an integrated semiconductor-dielectric hybrid dual-frequency laser operating in the 1.5 $μ$m wavelength range for microwave and terahertz (THz) generation. Generating a microwave beat frequency near 11 GHz, we observe a record-narrow intrinsic linewidth as low as about 2 kHz. This is realized by hybrid integration of a single diode amplifier based on indium phosphide (InP) with a long, low-loss silicon nitride (Si$_3$N$_4$) feedback circuit to extend the cavity photon lifetime, resulting in a cavity optical roundtrip length of about 30 cm on a chip. Simultaneous lasing at two frequencies is enabled by introducing an external control parameter for balancing the feedback from two tunable, frequency-selective Vernier mirrors on the Si$_3$N$_4$ chip. Each frequency can be tuned with a wavelength coverage of about 80 nm, potentially allowing for the generation of a broad range of frequencies in the microwave range up to the THz range.
