论文标题
工程三维Moiré平板乐队
Engineering Three Dimensional Moiré Flat Bands
论文作者
论文摘要
我们证明,可以将Moiré平面带的概念推广,以在所有三个空间维度中实现电子带工程。对于许多二维的范德华材料,扭曲两个相邻层相对于彼此,会导致两个相应的空间方向的平坦电子带 - 这有时被称为二跨性别,因为它可以实现大量的物理现象。在这两个维平面中,纳米尺寸形式的大型Moiré图案。我们在这里提出的基本概念是以预定义的模式将多个扭曲层堆叠在彼此之上。如果选择了图案使得相对于层的堆叠方向,则大型空间Moiré特征在空间上从一个扭曲的层转移到另一个扭曲层,系统在所有三个空间方向上显示扭曲角度控制的平面频带。因此,我们的建议将二一个二维的使用扩展到三个维度。我们通过考虑石墨系统,氮化硼和WSE $ _2 $作为候选材料来体现一般概念,但是该方法适用于任何二维范德华材料。对于六角硼硝化硼,我们开发了一个从头静止的紧密结合模型,该模型捕获了相应的三维低能电子结构。我们概述了可以在此途径之后诱导和控制物质的有趣的三维相关阶段,包括量子磁铁和非常规的超导状态。
We demonstrate that the concept of moiré flat bands can be generalized to achieve electronic band engineering in all three spatial dimensions. For many two dimensional van der Waals materials, twisting two adjacent layers with respect to each other leads to flat electronic bands in the two corresponding spatial directions -- a notion sometimes referred to as twistronics as it enables a wealth of physical phenomena. Within this two dimensional plane, large moiré patterns of nanometer size form. The basic concept we propose here is to stack multiple twisted layers on top of each other in a predefined pattern. If the pattern is chosen such that with respect to the stacking direction of layers, the large spatial moiré features are spatially shifted from one twisted layer to the next, the system exhibits twist angle controlled flat bands in all of the three spatial directions. With this, our proposal extends the use of twistronic to three dimensions. We exemplify the general concept by considering graphitic systems, boron nitride and WSe$_2$ as candidate materials, but the approach is applicable to any two-dimensional van der Waals material. For hexagonal boron nitride we develope an ab initio fitted tight binding model that captures the corresponding three dimensional low-energy electronic structure. We outline that interesting three dimensional correlated phases of matter can be induced and controlled following this route, including quantum magnets and unconventional superconducting states.