论文标题
基于潜在屏障的现实形式，MOSFET传导通道长度的基本约束
Fundamental constraints for the length of the MOSFET conduction channel based on the realistic form of the potential barrier
论文作者
论文摘要
该工作估计MOSFET晶体管的最小通道长度，这是现代电子产品的BACIS设备。考虑到该通道中潜在屏障的实际形状表明，在存在排水电压的情况下，通过区域的电子隧道明显短于通道的物理长度，因此，硅MOSFET中最小量子约束通道长度的可用估计值为1.2 nm，被显着低估。事实表明，为什么在达到通道的5 nm工作长度后，在维持晶体管的适当水平下，无法达到3 nm的长期值。这项工作中提出的估计几乎已经达到了硅MOSFET的基本规模限制。
The work estimates the minimum channel length of the MOSFET transistor, which is the bacis device of modern electronics. Taking into account the real shape of potential barrier in the channel shows that the electron tunnels through a region significantly shorter than the physical length of the channel in the presence of drain voltage, and so the available estimate of the minimum quantum constraint channel length in silicon MOSFET, 1.2 nm, is significantly underestimated. The fact makes it clear why after reaching 5 nm working lengths of the channel it was impossible to reach the long-declared values of 3 nm under maintaining the proper level of functionality of the transistor. The estimates made in this work confirm that the fundamental scaling limits of silicon MOSFETs have almost been reached.
