论文标题
降低了具有光学活性区域缺陷管理的GESN微型腔中的激光阈值
Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region
论文作者
论文摘要
如今，GESN合金被认为是在完整的互补金属氧化物半导体兼容的方法中在硅（SI）上建立IV组激光源的最有希望的材料。 GESN激光的最新开发依赖于提高频带结构的直接性，这是通过在SI上的网辉（GE）虚拟底物（VS）上增加厚的GESN层中的SN含量。尽管如此，这些激光器仍缺乏缺陷管理和高阈值密度。在这项工作中，我们检查了GESN合金的激光特性，其含量为7 \％至10.5 \％。将GESN层模式化为悬浮的微型腔，并在4- \ si {8} {\ micro \ meter}范围内具有不同的直径。 We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature.在去除GESN微型腔活动的活性区域中，去除了密集的不合适位错阵列后，获得了这些结果。结果为基于GESN的激光资源的未来设计提供了新的观点。
GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.
