论文标题
室温下单层Mose2中的激子 - phonon耦合强度
Exciton-phonon coupling strength in single-layer MoSe2 at room temperature
论文作者
论文摘要
在基本物理和应用方面，单层过渡金属二进制基因源是不断增加的研究工作的中心。激子 - phonon耦合在确定这些材料的（Opto）电子性能中起关键作用。但是，尚未在室温下测量激子偶联强度。在这里，我们开发了二维微光谱镜检查，以确定单层Mose2的激子 - Phonon耦合。我们检测到跳动信号是等待时间t的函数，这是由A激子和A'1光学声子之间的耦合引起的。对二维跳动地图与模拟结合的分析提供了激子 - Phonon耦合。 〜1的黄 - rhys因子比大多数其他无机半导体纳米结构大。我们的技术提供了一种独特的工具，可以在其他异质半导体系统中测量具有空间分辨率〜260 nm的其他半导体系统中的激子耦合，并将为光电设备的开发提供与设计相关的参数。
Single-layer transition metal dichalcogenides are at the center of an ever increasing research effort both in terms of fundamental physics and applications. Exciton-phonon coupling plays a key role in determining the (opto)electronic properties of these materials. However, the exciton-phonon coupling strength has not been measured at room temperature. Here, we develop two-dimensional micro-spectroscopy to determine exciton-phonon coupling of single-layer MoSe2. We detect beating signals as a function of waiting time T, induced by the coupling between the A exciton and the A'1 optical phonon. Analysis of two-dimensional beating maps combined with simulations provides the exciton-phonon coupling. The Huang-Rhys factor of ~1 is larger than in most other inorganic semiconductor nanostructures. Our technique offers a unique tool to measure exciton-phonon coupling also in other heterogeneous semiconducting systems with a spatial resolution ~260 nm, and will provide design-relevant parameters for the development of optoelectronic devices.
