论文标题
在高级光子源处具有硬X射线过渡边缘传感器的集成电路的光束线光谱
Beamline Spectroscopy of Integrated Circuits With Hard X-ray Transition Edge Sensors at the Advanced Photon Source
论文作者
论文摘要
在Argonne国家实验室，我们正在开发用于梁线科学的硬X射线（2至20 KEV）过渡边缘传感器（TES）阵列。与基于半导体的能量分散探测器相比，超导检测器提供的能量分辨率显着改善，但比波长 - 散射仪器的收集效率更好，将大大改善X射线发射和吸收光谱测量值。现在，具有24微波频率多路复用像素的原型仪器现在正在先进的光子源（APS）1-BM梁线进行测试。初始测量结果表明，与当前可用于APS光束线使用者可用的硅 - 拖船检测器相比，能量分辨率要高10倍（150 eV，而<15 eV），特别是证明了在包含多个过渡金属元件的样品中解决紧密间隔的发射线的能力，例如集成电路。将用我们在光束线上测量的苔丝测量的集成电路的荧光光谱与用硅探测器测量的荧光光谱，我们发现了基于半导体检测器的发射线和元素很大程度上隐藏了（例如HF与Cu旁边的HF），但通过TES解决了很好的解决。这直接显示了荧光映射中TES仪器的强度。
At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to semiconductor-based energy-dispersive detectors, but with better collection efficiency than wavelength-dispersive instruments, will enable greatly improved X-ray emission and absorption spectroscopic measurements. A prototype instrument with 24 microwave-frequency multiplexed pixels is now in testing at the Advanced Photon Source (APS) 1-BM beamline. Initial measurements show an energy resolution ten times better (150 eV compared to < 15 eV) than the silicon-drift detectors currently available to APS beamline users, and in particular demonstrate the ability to resolve closely-spaced emission lines in samples containing multiple transition metal elements, such as integrated circuits. Comparing fluorescence spectra of integrated circuits measured with our TESs at the beamline to those measured with silicon detectors, we find emission lines and elements largely hidden (e.g. Hf alongside Cu) from a semiconductor-based detector but well resolved by a TES. This directly shows the strengths of TES-based instruments in fluorescence mapping.
