论文标题
节点线半径VAS $ _2 $
Magnetoresistance and Kondo effect in the nodal-line semimetal VAs$_2$
论文作者
论文摘要
我们对电子带结构和费米表面进行了计算，并测量了纵向电阻率$ρ_{xx}（xx}（t，t，h）$，霍尔电阻率$ρ_{xy}（xy}（t，h）$，以及磁敏感性作为温度和各种磁场的磁场，vas $ _2 $具有单型$ _2 $，具有单基因结构。频带结构计算表明，当忽略自旋轨道耦合时，VAS $ _2 $是节点线半学。在$ h $ = 0处测量的最低约11 k的最低出现在$ρ_{xx}（t）$中，表明，在VAS $ _2 $ _2 $单晶中发生了另外的磁性（V $^{4+} $，$ s $ = 1/2），这两种均由$ρ_{xx} $ cop conscorce of两者都证明了。发现在10 k和9 t时达到649 \％的巨大正磁力（MR），其几乎二次的场依赖性，并且在VAS $ _2中也出现了$ρ_{xx}（xx}（xx} $ emerge的野外诱发的行为，同样在vas $ _2中也出现，尽管MR与其他散射相比，MR并没有如此之大，但MR并不是如此之大。观察到的特性归因于完美的电荷载体补偿，这两个计算都依赖于费米表面和霍尔电阻率测量。这些结果表明，包含V（$ 3D^3 4S^2 $）元素的化合物是研究磁杂质对拓扑特性的影响的平台。
We performed calculations of the electronic band structure and the Fermi surface as well as measured the longitudinal resistivity $ρ_{xx}(T,H)$, Hall resistivity $ρ_{xy}(T,H)$, and magnetic susceptibility as a function of temperature and various magnetic fields for VAs$_2$ with a monoclinic crystal structure. The band structure calculations show that VAs$_2$ is a nodal-line semimetal when spin-orbit coupling is ignored. The emergence of a minimum at around 11 K in $ρ_{xx}(T)$ measured at $H$ = 0 demonstrates that an additional magnetic impurity (V$^{4+}$, $S$ = 1/2) occurs in VAs$_2$ single crystals, evidenced by both the fitting of $ρ_{xx}(T)$ data and the susceptibility measurements. It was found that a large positive magnetoresistance (MR) reaching 649\% at 10 K and 9 T, its nearly quadratic field dependence, and a field-induced up-turn behavior of $ρ_{xx}(T)$ emerge also in VAs$_2$, although MR is not so large due to the existence of additional scattering compared with other topological nontrival/trival semimetals. The observed properties are attributed to a perfect charge-carrier compensation, which is evidenced by both calculations relying on the Fermi surface and the Hall resistivity measurements. These results indicate that the compounds containing V ($3d^3 4s^2$) element as a platform for studying the influence of magnetic impurities to the topological properties.
