论文标题

拓扑绝缘体BI2SE3中的量子频率加倍

Quantum frequency doubling in the topological insulator Bi2Se3

论文作者

He, Pan, Isobe, Hiroki, Zhu, Dapeng, Hsu, Chuang-Han, Fu, Liang, Yang, Hyunsoo

论文摘要

由于浆果曲率偶极子(BCD)引起的非线性霍尔效应会诱导频率加倍,最近在时间反转不变的材料中观察到了频率。在这里,我们报告了在零磁场下拓扑绝缘子BI2SE3表面上没有BCD的情况下,新的电频率加倍。我们观察到,频率横向上施加的AC电流的频率倍增电压显示出三倍的旋转对称性,而它禁止BCD。与对称性兼容的机制之一是偏斜散射,这是由于拓扑表面状态的固有手性引起的。我们介绍了浆果曲率三重,这是浆果曲率的高阶力矩,以解释在三重旋转对称性下的偏斜散射。我们的工作为获得高迁移率量子材料的巨型二阶非线性电效应铺平了道路,因为偏斜散射超过了清洁极限的其他机制。

The nonlinear Hall effect due to Berry curvature dipole (BCD) induces frequency doubling, which was recently observed in time-reversal-invariant materials. Here we report novel electric frequency doubling in the absence of BCD on a surface of the topological insulator Bi2Se3 under zero magnetic field. We observe that the frequency-doubling voltage transverse to the applied ac current shows a threefold rotational symmetry, whereas it forbids BCD. One of the mechanisms compatible with the symmetry is skew scattering, arising from the inherent chirality of the topological surface state. We introduce the Berry curvature triple, a high-order moment of the Berry curvature, to explain skew scattering under the threefold rotational symmetry. Our work paves the way to obtain a giant second-order nonlinear electric effect in high mobility quantum materials, as the skew scattering surpasses other mechanisms in the clean limit.

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