论文标题
Ferh中的异常大厅和Nernst效果
Anomalous Hall and Nernst Effects in FeRh
论文作者
论文摘要
具有可调节相变的抗铁磁铁对于将来的Spintronics应用有希望。我们研究了FERH薄膜的自旋依赖性转运特性，该特性显示了温度驱动的抗铁磁至有铁磁相变。在MGO（001）底物上生长的外延FIRH膜表现出清晰的磁性和电子相变。通过在广泛的温度下进行异常的大厅和异常的Nernst效应测量，我们证明了热驱动的过渡在相变的两侧显示出明显不同的横向转运。特别是，观察到异常大厅和Nernst信号的标志变化。
Antiferromagnets with tunable phase transitions are promising for future spintronics applications. We investigated spin-dependent transport properties of FeRh thin films, which show a temperature driven antiferromagnetic-to-ferromagnetic phase transition. Epitaxial FeRh films grown on MgO (001) substrates exhibit a clear magnetic and electronic phase transition. By performing anomalous Hall and anomalous Nernst effect measurements over a wide range of temperatures, we demonstrate that the thermally driven transition shows distinctly different transverse transport on both side of the phase transition. Particularly, a sign change of both anomalous Hall and Nernst signals is observed.
