论文标题
在固有单载波设备中注入
On Injection in Intrinsic Single-Carrier Devices
论文作者
论文摘要
通过考虑单载波设备的界面电荷载体密度的变化，与注入式栏的高度有关，并将其与欧姆触点的设备的平衡，背景电荷载体密度进行比较，我们计算了这些障碍物的简单条件，何时预期这些障碍物会限制限制设备中的空间充电量电流。我们表明，这些条件取决于设备温度，半导体相对介电常数和状态的有效密度，但最重要的是要探测半导体膜的厚度。这与以前的观察值和相似的派生表达相符，因为缺陷会影响单载波设备。本文所述的条件可用于帮助设计单载波设备，以实现不受注入限制的太空限制电流测量值。
By considering the changes in the interface charge-carrier densities of a single-carrier device as a function of injection-barrier heights and comparing these to the equilibrium, background charge-carrier density of a device with Ohmic contacts, we calculate simple conditions for when these barriers are expected to limit injection and therefore significantly affect space-charge-limited currents in the device. We show that these conditions depend on the device temperature, semiconductor relative permittivity, and effective density of states, but most importantly the thickness of the semiconducting film being probed. This is in accordance with previous observations and similar derived expressions for when defects influence single-carrier devices. The conditions described herein can be used to aid the design of single-carrier devices for space-charge-limited current measurements that are not limited by injection.
