论文标题
基于外延石墨烯P-N连接的可编程量子电阻标准的设计
Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions
论文作者
论文摘要
我们报告了顶部门控外延石墨烯P-N连接的制造和测量，其中将去角质的六角硼（H-BN）用作栅极介电。在von klitzing常数r_k上对单个连接的四末端纵向电阻进行了很好的量化，相对不确定性为10-7。在探索了许多参数空间之后，我们总结了这些设备可以作为潜在电阻标准的条件。此外，我们使用外部门控提供了六个数量级的可编程电阻标准的设计。
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.
