论文标题
垂直磁性隧道连接带有多面层的层
Perpendicular magnetic tunnel junctions with multi-interface free layer
论文作者
论文摘要
后代的磁随机访问记忆需求磁性隧道连接，这些连接可以同时提供高磁场，强大的保留率，低开关能量和小于10nm以下的小细胞尺寸。在这里，我们研究了具有复合材料层的垂直磁性隧道连接，其中多个铁磁性/非磁铁接口可以有助于热稳定性。在这些多界面的层中，已使用不同的非磁性材料（MGO，TA，MO）作为耦合层。研究了在不同退火条件下的交界特性的演变。已经观察到了隧穿磁阻的对第一COFEB层厚度的强烈依赖性。在将MO和MGO用作耦合层的连接处，在400°C退火后，已经达到了超过200％的大型隧道磁力。
Future generations of magnetic random access memory demand magnetic tunnel junctions that can provide simultaneously high magnetoresistance, strong retention, low switching energy and small cell size below 10nm. Here we study perpendicular magnetic tunnel junctions with composite free layers where multiple ferromagnet/nonmagnet interfaces can contribute to the thermal stability. Different nonmagnetic materials (MgO, Ta, Mo) have been employed as the coupling layers in these multi-interface free layers. The evolution of junction properties under different annealing conditions is investigated. A strong dependence of tunneling magnetoresistance on the thickness of the first CoFeB layer has been observed. In junctions where Mo and MgO are used as coupling layers, large tunneling magnetoresistance above 200% has been achieved after 400°C annealing.
