论文标题
通过介电膜中一个孔的原子：分散力对基于面膜的物质波光刻的影响
An atom passing through a hole in a dielectric membrane: Impact of dispersion forces on mask-based matter-wave lithography
论文作者
论文摘要
对于一系列应用，包括半导体行业，量子电子，纳米光子学等，快速，大面积的任意结构模式非常重要。最近有人提出，可以通过通过二进制全息掩模发送亚稳态氦原子来实现纳米分辨率掩模光刻。但是，这些第一个计算是使用简单的标量波方法完成的，该方法没有考虑原子与掩膜材料之间的分散力相互作用。为了获得想法的真正潜力，有必要访问这种相互作用如何影响原子。在这里，我们介绍了原子与带孔的介电膜之间的分散力相互作用的理论研究。我们使用实验上现实的波长（0.05-1 nm）和膜厚度（5-50 nm）来研究亚稳态和基态氦气。我们发现，对于亚稳态氦气，有效孔半径降低了1-7 nm，而对于地面氦气，有效孔半径为0.5-3.5 nm。如预期的那样，对于厚膜和缓慢的原子，减少最大。
Fast, large area patterning of arbitrary structures down to the nanometre scale is of great interest for a range of applications including the semiconductor industry, quantum electronics, nanophotonics and others. It was recently proposed that nanometre-resolution mask lithography can be realised by sending metastable helium atoms through a binary holography mask consisting of a pattern of holes. However, these first calculations were done using a simple scalar wave approach, which did not consider the dispersion force interaction between the atoms and the mask material. To access the true potential of the idea, it is necessary to access how this interaction affects the atoms. Here we present a theoretical study of the dispersion force interaction between an atom and a dielectric membrane with a hole. We look at metastable and ground state helium, using experimentally realistic wavelengths (0.05-1 nm) and membrane thicknesses (5-50 nm). We find that the effective hole radius is reduced by around 1-7 nm for metastable helium and 0.5-3.5 nm for ground-state helium. As expected, the reduction is largest for thick membranes and slow atoms.
