论文标题
二维MOSI2N4：出色的晶体管2D半导体
Two-dimensional MoSi2N4: An Excellent 2D Semiconductor for Transistors
论文作者
论文摘要
我们使用第一个原理量子传输模拟，报告了由最近合成的分层二维MOSI2N_4作为通道材料组成的现场效应晶体管（FET）的性能。根据设备和系统的国际路线图（IRDS）2020年的路线图，对设备的性能进行了评估，并将其与先进的基于硅的FET，基于碳纳米管的FET和其他有前途的二维材料FET进行了比较。最后，我们根据双门设备和基准测试有希望的替代逻辑技术估算组合和顺序逻辑电路的优点。我们的设备和电路的性能令人鼓舞，并且具有其他逻辑替代方案的竞争力。
We report the performance of field-effect transistors (FETs), comprised of mono-layer of recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first principles quantum transport simulations. The devices' performance is assessed as per the International Roadmap for Devices and Systems (IRDS) 2020 roadmap for the year 2034 and compared to advanced silicon-based FETs, carbon nanotube-based FETs, and other promising two-dimensional materials based FETs. Finally, we estimate the figure of merits of a combinational and a sequential logic circuit based on our double gate devices and benchmark against promising alternative logic technologies. The performance of our devices and circuits based on them are encouraging, and competitive to other logic alternatives.
