论文标题
跨越有偏见的半导体血浆固体界面的动力学
Charge kinetics across a negatively biased semiconducting plasma-solid interface
论文作者
论文摘要
介绍了对偏置半导体血浆 - 固定界面的自偏双极电荷动力学的研究。对于具有非极性电子 - 光子散射的薄锗层的特定情况，夹在欧姆接触和无碰撞的氩气血浆之间，我们计算了电流 - 电压的特性，并表明它受到半导体的电子微物理学的影响。我们还获得了层内部的空间和能量分辨的通量和电荷分布，从而可视化电荷载体负责电荷传输的行为。 Albeit not quantitative, because of the crude model for the germanium band structure and the neglect of particle-nonconserving scattering processes, such as impact ionization and electron-hole recombination, which at the energies involved cannot be neglected, our results clearly indicate (i) the current through the interface is carried by rather hot carriers and (ii) the perfect absorber model, often used for the description of charge transport across plasma-solid interfaces, cannot维护半导体界面。
An investigation of the selfconsistent ambipolar charge kinetics across a negatively biased semiconducting plasma-solid interface is presented. For the specific case of a thin germanium layer with nonpolar electron-phonon scattering, sandwiched between an Ohmic contact and a collisionless argon plasma, we calculate the current-voltage characteristic and show that it is affected by the electron microphysics of the semiconductor. We also obtain the spatially and energetically resolved fluxes and charge distributions inside the layer, visualizing thereby the behavior of the charge carriers responsible for the charge transport. Albeit not quantitative, because of the crude model for the germanium band structure and the neglect of particle-nonconserving scattering processes, such as impact ionization and electron-hole recombination, which at the energies involved cannot be neglected, our results clearly indicate (i) the current through the interface is carried by rather hot carriers and (ii) the perfect absorber model, often used for the description of charge transport across plasma-solid interfaces, cannot be maintained for semiconducting interfaces.
