论文标题

MGO上铁二聚体的磁态和高精细场的相互作用(001)

Interplay of magnetic states and hyperfine fields of iron dimers on MgO(001)

论文作者

Shehada, Sufyan, Dias, Manuel dos Santos, Abusaa, Muayad, Lounis, Samir

论文摘要

单个核自旋状态可能具有很长的寿命,并且可以用作量子位。通过检测使用扫描隧道显微镜(STM)检测Fe,Ti和Cu Adatoms的超精细相互作用(HFI),在MGO/AG(001)上取得了进展。以前,我们从第一原理中系统地量化了沉积在各种超薄绝缘子上的整个3D过渡Adatoms(SC-CU)的序列,从而确定了计算的HFI趋势,以填充ADATOM的磁S和D-轨道,并与Adatoms的磁性S-和D-Ordots粘合到粘结。在这里,我们通过研究HFI与自由常见的Fe二聚体,单个Fe Adatoms和沉积在MGO双层(001)双层(001)的磁态之间的相关性来探索二聚体的情况。我们发现,可以通过切换二聚体的磁态来控制HFI的大小。对于短距离距离,抗磁性状态增强了相对于铁磁状态的HFI。通过增加磁原子之间的距离,可以观察到向相反行为的过渡。此外,我们证明了通过原子控制底物的位置来实质性修改HFI的能力。我们的结果建立了通常的超精素哈密顿量的适用性局限性,我们提出了基于多个散射过程的扩展。

Individual nuclear spin states can have very long lifetimes and could be useful as qubits. Progress in this direction was achieved on MgO/Ag(001) via detection of the hyperfine interaction (HFI) of Fe, Ti and Cu adatoms using scanning tunneling microscopy (STM). Previously, we systematically quantified from first-principles the HFI for the whole series of 3d transition adatoms (Sc-Cu) deposited on various ultra-thin insulators, establishing the trends of the computed HFI with respect to the filling of the magnetic s- and d-orbitals of the adatoms and on the bonding with the substrate. Here we explore the case of dimers by investigating the correlation between the HFI and the magnetic state of free standing Fe dimers, single Fe adatoms and dimers deposited on a bilayer of MgO(001). We find that the magnitude of the HFI can be controlled by switching the magnetic state of the dimers. For short Fe- Fe distances, the antiferromagnetic state enhances the HFI with respect to that of the ferromagnetic state. By increasing the distance between the magnetic atoms, a transition towards the opposite behavior is observed. Furthermore, we demonstrate the ability to substantially modify the HFI by atomic control of the location of the adatoms on the substrate. Our results establish the limits of applicability of the usual hyperfine hamiltonian and we propose an extension based on multiple scattering processes.

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