论文标题
大区域的杂田，单晶铅卤化物钙钛矿膜上的艾森尼膜
Heteroepitaxy of Large-Area, Monocrystalline Lead Halide Perovskite Films on Gallium Arsenide
论文作者
论文摘要
铅卤化物钙钛矿材料已成为高性能光电设备的有前途的候选者。大量的努力试图实现大规模的单晶钙钛矿膜。在这里，我们在格子菌（Mapbbr3）膜上的外生呈单晶甲基铵铅铅三元铅（MAPBBR3）膜上的膜均以厘米级的比例生长。特别是，溶液处理的铅（II）硫化物（PBS）层为固体气体反应提供了晶格匹配的化学保护界面，以在GAAS上形成MapBBR3膜。结构表征确定了三层MAPBBR3/PBS/GAAS EPI结构中的晶体方向，并确认MAPBBR3在PBS/GAAS上的单晶性质。生长过程中表面形态的动态演化表明两步外延过程。这些基本的理解和实践增长技术提供了一个可行的指南，可以将高质量的钙钛矿膜用于以前无法访问的应用。
Lead halide perovskite materials have been emerging as promising candidates for high-performance optoelectronic devices. Significant efforts have sought to realize monocrystalline perovskite films at a large scale. Here, we epitaxially grow monocrystalline methylammonium lead tribromide (MAPbBr3) films on lattice-matched gallium arsenide (GaAs) substrates at a centimeter scale. In particular, a solution-processed lead(II) sulfide (PbS) layer provides a lattice-matched and chemical protective interface for the solid-gas reaction to form MAPbBr3 films on GaAs. Structure characterizations identify the crystal orientations in the trilayer MAPbBr3/PbS/GaAs epi-structure and confirm the monocrystalline nature of MAPbBr3 on PbS/GaAs. The dynamic evolution of surface morphologies during the growth indicates a two-step epitaxial process. These fundamental understandings and practical growth techniques offer a viable guideline to approach high-quality perovskite films for previously inaccessible applications.
