论文标题
重新访问半导体中过度率的暗物质解释
Revisiting the Dark Matter Interpretation of Excess Rates in Semiconductors
论文作者
论文摘要
鉴于低阈值暗物质探测器的最新结果，我们重新审视了在众多直接检测实验中多次过量的共同暗物质起源的可能性，重点是半导体检测器的过度速率。我们探讨了硅超晶量超过40 eV的硅质超量量过剩速率的解释，这是由常见但未知的起源引起的，在Edelweiss表面检测器中的100 eV，并证明了这两个实验中观察到的能量光谱的兼容拟合，并遵循索引$α=α= aintex $α=α= aintex $α= aintex $α= aintex $α= aintex $α= 3.43^{+0.11} _ { - 0.06} $。尽管这两个过高的速率的正常化具有大约质量数量$ a^2 $的正常化，但我们认为，通过核路后退的暗物质散射来起源的可能性是强烈的，即使是允许异国情调的凝结物质效应，甚至可以使ASET无效的Kinemative Inderiment compobience velys velys velys velosime velocients veloctime velociens，甚至允许外在的凝结物质效应。硅和锗过剩。我们还研究了宇宙射线中子，太阳中微子和光子作为原点的非弹性核散射的可能性，并根据已知的颗粒通量来定量地贬低所有三个。
In light of recent results from low-threshold dark matter detectors, we revisit the possibility of a common dark matter origin for multiple excesses across numerous direct detection experiments, with a focus on the excess rates in semiconductor detectors. We explore the interpretation of the low-threshold calorimetric excess rates above 40 eV in the silicon SuperCDMS Cryogenic Phonon Detector and above 100 eV in the germanium EDELWEISS Surface detector as arising from a common but unknown origin, and demonstrate a compatible fit for the observed energy spectra in both experiments, which follow a power law of index $α= 3.43^{+0.11}_{-0.06}$. Despite the intriguing scaling of the normalization of these two excess rates with approximately the square of the mass number $A^2$, we argue that the possibility of common origin by dark matter scattering via nuclear recoils is strongly disfavored, even allowing for exotic condensed matter effects in an as-yet unmeasured kinematic regime, due to the unphysically-large dark matter velocity required to give comparable rates in the different energy ranges of the silicon and germanium excesses. We also investigate the possibility of inelastic nuclear scattering by cosmic ray neutrons, solar neutrinos, and photons as the origin, and quantitatively disfavor all three based on known fluxes of particles.
