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Resistive switching devices herald a transformative technology for memory and computation, offering considerable advantages in performance and energy efficiency. Here we employ a simple and scalable material system of conductive oxide interfaces and leverage their unique properties for a new type of resistive switching device. For the first time, we demonstrate an $\rm Al_2O_3-TiO_2$ based valence-change resistive switching device, where the conductive oxide interface serves both as the back electrode and as a reservoir of defects for switching. The amorphous-polycrystalline $\rm Al_2O_3-TiO_2$ conductive interface is obtained following the technological path of simplifying the fabrication of the two-dimensional electron gases (2DEGs), making them more scalable for practical mass integration. We combine physical analysis of the device chemistry and microstructure with comprehensive electrical analysis of its switching behavior and performance. We pinpoint the origin of the resistive switching to the conductive oxide interface, which serves as the bottom electrode and as a reservoir of oxygen vacancies. The latter plays a key role in valence-change resistive switching devices. The new device, based on scalable and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes, opens new design spaces towards increased tunability and simplification of the device selection challenge.