论文标题
ge-ge $ _ {0.92} $ sn $ _ {0.08} $ core-shell单纳米线红外光电探测器具有较高的芯片光学通信特征
Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell single nanowire infrared photodetector with superior characteristics for on-chip optical communication
论文作者
论文摘要
GE $ _ {1-x} $ sn $ _x $纳米线的最新开发项目超出了稳固的溶解度限制，使它们对Nanoscale的所有组合IV Si-IV Si-Noctrared Photonics具有吸引力。在此，我们报告了一种化学蒸气沉积的高SN-CONTENT GE-GE $ _ {0.92} $ SN $ _ {0.08} $基于基于单纳米壳的单纳米壳光电探测器，以1.55 $ $ m的光学通信波长运行。已经使用X射线光电子和拉曼光谱数据研究了纳米线中SN的原子浓度。通过电子束光刻工艺制造的金属 - 基因导向器基 - 金属光电探测器即使在零偏置处也显示出明显的室温光响应。除了纳米线的高结晶质量和相同的外壳组成之外兼容片上光学通信设备应用程序。
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour deposition-grown high Sn-content Ge-Ge$_{0.92}$Sn$_{0.08}$ core-shell based single nanowire photodetector operating at the optical communication wavelength of 1.55 $μ$m. The atomic concentration of Sn in nanowires has been studied using X-ray photoelectron and Raman spectroscopy data. A metal-semiconductor-metal based single nanowire photodetector, fabricated via electron beam lithography process, exhibits significant room-temperature photoresponse even at zero bias. In addition to the high-crystalline quality and identical shell composition of the nanowire, the efficient collection of photogenerated carriers under an external electric field result in the superior responsivity and photoconductive gain as high as ~70.8 A/W and ~57, respectively at an applied bias of -1.0 V. The extra-ordinary performance of the fabricated photodetector demonstrates the potential of GeSn nanowires for future Si CMOS compatible on-chip optical communication device applications.
