论文标题
掺杂半导体中的复合激体状态
Composite excitonic states in doped semiconductors
论文作者
论文摘要
我们提出了掺杂半导体中复合激素状态的理论模型。光激发电子孔对与电子气体之间的多体相互作用集成到可通过变异方法求解的计算障碍的几种问题中。由于其传导带的对比性，我们专注于电子掺杂的ML-Mose $ _2 $和ML-WSE $ _2 $。在这两种情况下，复合材料的核心都是紧密结合的TRION（两个电子和价带孔），周围是被电子耗尽的区域。 ML-WSE $ _2 $中的复合材料进一步包括具有不同量子数的卫星电子。该理论是一般的，可以应用于具有各种能量带特性的半导体，从而可以计算其激子状态并量化与费米海的相互作用。
We present a theoretical model of composite excitonic states in doped semiconductors. Many-body interactions between a photoexcited electron-hole pair and the electron gas are integrated into a computationally tractable few-body problem, solved by the variational method. We focus on electron-doped ML-MoSe$_2$ and ML-WSe$_2$ due to the contrasting character of their conduction bands. In both cases, the core of the composite is a tightly-bound trion (two electrons and valence-band hole), surrounded by a region depleted of electrons. The composite in ML-WSe$_2$ further includes a satellite electron with different quantum numbers. The theory is general and can be applied to semiconductors with various energy-band properties, allowing one to calculate their excitonic states and to quantify the interaction with the Fermi sea.
