论文标题
掺杂的莫特绝缘子的霍尔效应：DMFT-Approximation
Hall effect in doped Mott insulator: DMFT-approximation
论文作者
论文摘要
在动态平均场理论（DMFT）的框架中，我们将掺杂的莫特绝缘子中的霍尔效应分析为父基酸酯超导体。我们考虑下哈伯德带的部分填充（孔掺杂），并计算霍尔系数和霍尔的依赖性对孔掺杂的依赖性，这确定了大厅系数的标志变化的临界浓度。注意到大厅效应的明显依赖性。在正常状态的YBCO状态下，在实验中获得的霍尔数量的浓度依赖性证明了良好的一致性。
In the framework of dynamical mean field theory (DMFT) we analyze Hall effect in doped Mott insulator as a parent cuprate superconductor. We consider the partial filling (hole doping) of the lower Hubbard band and calculate the dependence of Hall coefficient and Hall number on hole doping, determining the critical concentration for sign change of the Hall coefficient. Significant temperature dependence of Hall effect is noted. A good agreement is demonstrated with concentration dependence of Hall number obtained in experiments in the normal state of YBCO.
