论文标题
使用原子层沉积制造的鳞片氧化型晶体管
Scaled indium oxide transistors fabricated using atomic layer deposition
论文作者
论文摘要
为了继续提高集成的电路性能和功能，需要缩放的晶体管，其长度短，厚度较低。但是，基于硅的设备的进一步缩放以及与当前制造工艺兼容的替代半导体通道材料的开发是具有挑战性的。在这里，我们报告了原子层沉积的氧化二晶晶体管，其通道长度降至8 nm，通道厚度降至0.5 nm，等效的介电氧化物厚度降至0.84 nm。由于设备的尺寸尺寸和低接触性，该设备在0.5 V的排水电压下表现出高3.1 A/mm的高状态电流，在排水电压1 V处的跨导压为1.5 s/mm。我们的设备是具有后端末端处理的缩放晶体的有希望的替代通道材料。
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of alternative semiconductor channel materials that are compatible with current fabrication processes is challenging. Here we report atomic-layer-deposited indium oxide transistors with channel lengths down to 8 nm, channel thicknesses down to 0.5 nm and equivalent dielectric oxide thickness down to 0.84 nm. Due to the scaled device dimensions and low contact resistance, the devices exhibit high on-state currents of 3.1 A/mm at a drain voltage of 0.5 V and a transconductance of 1.5 S/mm at a drain voltage 1 V. Our devices are a promising alternative channel material for scaled transistors with back-end-of-line processing compatibility.
