论文标题

在晶圆尺度上的硅光子环谐振器的装饰后修剪

Post-Fabrication Trimming of Silicon Photonic Ring Resonators at Wafer-Scale

论文作者

Jayatilleka, Hasitha, Frish, Harel, Kumar, Ranjeet, Heck, John, Ma, Chaoxuan, Sakib, Meer, Huang, Duanni, Rong, Haisheng

论文摘要

基于硅环谐振器的设备,例如调制器,检测器,过滤器和开关,在集成的光子电路中起重要作用,用于光学通信,高性能计算和传感应用。但是,对制造变化的高敏感性限制了其数量的制造性和商业采用。在这里,我们报告了一种低成本的装修后修剪方法,以调整硅环谐振器的共振波长,并在晶圆尺度上校正制造变化。我们使用GE植入物在环形谐振器中创建一个索引可至关的部分,并在片上加热器中施加精确和局部的热热退火,以调整并将其共振设置为所需的波长。我们展示了在300毫米硅启用器(SOI)晶片上制造的环形谐振器的共振波长修剪,到+/- 32 pm的目标波长1310 nm的+/- 32 pm之内,为这些设备提供了可行的高频制造和开放新实用应用的途径。

Silicon ring resonator-based devices, such as modulators, detectors, filters, and switches, play important roles in integrated photonic circuits for optical communication, high-performance computing, and sensing applications. However, the high sensitivity to fabrication variations has limited their volume manufacturability and commercial adoption. Here, we report a low-cost post-fabrication trimming method to tune the resonance wavelength of a silicon ring resonator and correct for fabrication variations at wafer-scale. We use a Ge implant to create an index trimmable section in the ring resonator and an on-chip heater to apply a precise and localized thermal annealing to tune and set its resonance to a desired wavelength. We demonstrate resonance wavelength trimming of ring resonators fabricated across a 300 mm silicon-on-insulator (SOI) wafer to within +/-32 pm of a target wavelength of 1310 nm, providing a viable path to high-volume manufacturing and opening up new practical applications for these devices.

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