论文标题
不同形状的双量子井中的电子光谱
Electron spectra in double quantum wells of different shapes
论文作者
论文摘要
我们建议一种在有序和无序的半导体结构（超晶格）中计算电子光谱的方法，形成双量子井（QW）。在我们的方法中，我们在相应扩散方程的解决方案的帮助下代表了schrödinger方程的解决方案。这是因为扩散是机制，它主要负责QW结构的非晶化（无序），导致所谓的界面混合。我们表明，这种结构中的电子光谱取决于量子井的形状，进而对应于有序的或无序的结构。也就是说，在无序物质中，QW通常具有光滑的边缘，而按顺序具有突然的矩形形状。目前的结果与GAAS/ALGAAS，GAN/ALGAN，HGCDTE/CDTE，ZnSE/Znmnse，Si/Sige等等异质结构有关，可用于高端电子，灵活电子，柔性电子，Spintronics，optoelectronics，optoelectronics和Energy Hroventing Applications。
We suggest a method for calculating electronic spectra in ordered and disordered semiconductor structures (superlattices) forming double quantum wells (QW). In our method, we represent the solution of Schrödinger equation for QW potential with the help of the solution of the corresponding diffusion equation. This is because the diffusion is the mechanism, which is primarily responsible for amorphization (disordering) of the QW structure, leading to so-called interface mixing. We show that the electron spectrum in such a structure depends on the shape of the quantum well, which, in turn, corresponds to an ordered or disordered structure. Namely, in a disordered substance, QW typically has smooth edges, while in ordered one it has an abrupt, rectangular shape. The present results are relevant for the heterostructures like GaAs/AlGaAs, GaN/AlGaN, HgCdTe/CdTe, ZnSe/ZnMnSe, Si/SiGe, etc., which may be used in high-end electronics, flexible electronics, spintronics, optoelectronics, and energy harvesting applications.
