论文标题

半导体 - 铁磁铁 - 渗透导体平面异质结构,用于一维拓扑超导性

Semiconductor-ferromagnet-superconductor planar heterostructures for 1D topological superconductivity

论文作者

Escribano, Samuel D., Maiani, Andrea, Leijnse, Martin, Flensberg, Karsten, Oreg, Yuval, Yeyati, Alfredo Levy, Prada, Elsa, Souto, Rubén Seoane

论文摘要

半导体(SM)纳米线,外延生长的超导体(SC)和铁磁性绝缘体(FI)层的杂种结构已在实验和理论上作为零磁场上拓扑超导性的替代平台进行了探索。在这里,我们分析了三方SM/FI/SC异质结构,但在平面堆叠几何形状中实现,其中薄的FI层充当SM和SC之间的自旋极化隧道屏障。我们使用微观模拟来优化系统的几何参数,发现可以将混合系统调整为拓扑状态的FI厚度范围。在此范围内,由于堆叠几何形状,微不足道和拓扑阶段所提供的垂直限制,随着外部栅极的变化而定期交替出现,显示了一个坚硬的拓扑间隙,可以达到SC的一半。与使用六边形纳米线相比,这是一个显着的改进,该设置显示出通常较小且较柔和的间隙的不稳定的拓扑区域。我们的提案为准二维拓扑超导性提供了无磁场平面设计,具有有吸引力的实验控制和可伸缩性的特性。

Hybrid structures of semiconducting (SM) nanowires, epitaxially grown superconductors (SC), and ferromagnetic-insulator (FI) layers have been explored experimentally and theoretically as alternative platforms for topological superconductivity at zero magnetic field. Here, we analyze a tripartite SM/FI/SC heterostructure but realized in a planar stacking geometry, where the thin FI layer acts as a spin-polarized tunneling barrier between the SM and the SC. We optimize the system's geometrical parameters using microscopic simulations, finding the range of FI thicknesses for which the hybrid system can be tuned into the topological regime. Within this range, and thanks to the vertical confinement provided by the stacking geometry, trivial and topological phases alternate regularly as the external gate is varied, displaying a hard topological gap that can reach half of the SC one. This is a significant improvement compared to setups using hexagonal nanowires, which show erratic topological regions with typically smaller and softer gaps. Our proposal provides a magnetic field-free planar design for quasi-one-dimensional topological superconductivity with attractive properties for experimental control and scalability.

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