论文标题
新型的低工作功能半导体，用于量热和检测：高能量，暗物质和中微子现象
Novel Low Workfunction Semiconductors for Calorimetry and Detection: High Energy, Dark Matter and Neutrino Phenomena
论文作者
论文摘要
这份白皮书旨在扩展两种弱结合的半导体材料的应用CS3SB和AG-O-CS，几十年前首次开发了用于真空光电探测器S1，S-111光（S-11）的光电座，被证明具有低电子孔对能量。我们提出了这些半导体的形状和体积，而不是薄膜的光子座，而是通过原子或少数原子层用作二极管或漂移离子检测器的形状和体积。 AG-O-CS的E孔对阈值对低为0.5-0.7 eV沉积的能量，当冷却低于4摄氏度时，可实用； CS3SB的配对能量低至1.6-2 eV-小于Si（3.6 eV），但在室温下的热噪声类似于-30摄氏度。C。在-30摄氏度时，Photomultipliers暴露于10 mrad剂量表明，薄碱光疗中的薄碱光疗降低不会降低超过2％的初始定量效率的2％。
This White Paper seeks to extend the applications of two weakly bound semiconductor materials, Cs3Sb and Ag-O-Cs first developed decades ago for vacuum photodetectors S1, S-11 photocathodes, respectively, proven to have low electron-hole pair energies. Rather than thin film photocathodes, we propose fabrication of these semiconductors in shapes and volumes which could be used as diode or drifted ion detectors for low energy depositions via atom or few-atomic layers. Ag-O-Cs has an e-hole pair threshold pair low as 0.5-0.7 eV deposited energy, practical when cooled below 4 degrees K; Cs3Sb, with pair energy as low as 1.6-2 eV - less than Si (3.6 eV), but with thermal noise at room temperature similar to Si at -30 deg C. Exposure of photomultipliers to 10 MRad doses has shown that thin alkali photocathodes do not degrade more than 2% of initial quantum efficiency.
