论文标题
在Co $ _2 $ _2 $ _3 $ _3 $ _3 $ _3 $ _5 $ _5 $ o $ $ _ {12} $和gd $ _3 $ ga $ _5 $ _5 $ _5 $ _ {12} $ _ {12} $ _ {12} $的沉积温度温度依赖性和磁磁性转换中
Deposition temperature dependence of thermo-spin and magneto-thermoelectric conversion in Co$_2$MnGa films on Y$_3$Fe$_5$O$_{12}$ and Gd$_3$Ga$_5$O$_{12}$
论文作者
论文摘要
We have characterized Co$_2$MnGa (CMG) Heusler alloy films grown on Y$_3$Fe$_5$O$_{12}$ (YIG) and Gd$_3$Ga$_5$O$_{12}$ (GGG) substrates at different deposition temperatures and investigated thermo-spin and magneto-thermoelectric conversion properties by means of a锁定热力计技术。 X射线衍射，磁化和电运输测量表明，高底物温度下的沉积会诱导CMG的结晶结构，而在YIG（GGG）上的CMG膜在500°C（550°C）上制备的CMG膜的电阻率过高，无法测量高度序列的高度效果，使得高度启用了较大的效果，该效果的强度效果构建了强度效果，该效应的强度效果的强度效果构建了强度的效果。石榴石结构上的连续CMG膜。我们的锁定热力计测量结果表明，高底物温度下的沉积导致CMG/GGG的电流诱导的温度变化升高，而CMG/YIG的沉积降低。前者表明通过结晶增强了CMG中异常的效果。后者可以通过异常的Ettingshausen效应的叠加以及由无定形（结晶）CMG膜的正（负）电荷转换引起的旋转层效应的叠加和旋转毛发效应。这些结果提供了一个提示，该提示是构造基于Heusler合金的旋转电源设备。
We have characterized Co$_2$MnGa (CMG) Heusler alloy films grown on Y$_3$Fe$_5$O$_{12}$ (YIG) and Gd$_3$Ga$_5$O$_{12}$ (GGG) substrates at different deposition temperatures and investigated thermo-spin and magneto-thermoelectric conversion properties by means of a lock-in thermography technique. X-ray diffraction, magnetization, and electrical transport measurements show that the deposition at high substrate temperatures induces the crystallized structures of CMG while the resistivity of the CMG films on YIG (GGG) prepared at and above 500 °C (550 °C) becomes too high to measure the thermo-spin and magneto-thermoelectric effects due to large roughness, highlighting the difficulty of fabricating highly ordered continuous CMG films on garnet structures. Our lock-in thermography measurements show that the deposition at high substrate temperatures results in an increase in the current-induced temperature change for CMG/GGG and a decrease in that for CMG/YIG. The former indicates the enhancement of the anomalous Ettingshausen effect in CMG through crystallization. The latter can be explained by the superposition of the anomalous Ettingshausen effect and the spin Peltier effect induced by the positive (negative) charge-to-spin conversion for the amorphous (crystallized) CMG films. These results provide a hint to construct spin-caloritronic devices based on Heusler alloys.
