论文标题
综合超低反射倒在超薄硅太阳能电池的超低反射倒数阵列的无光刻方法
Lithography free method to synthesize the ultra-low reflection inverted-pyramid arrays for ultra-thin silicon solar cell
论文作者
论文摘要
硅倒金字塔阵列被认为是高效超薄太阳能电池的最有希望的结构之一，因为它们具有出色的光吸收和表面积增强的能力。但是，这种制造的现有技术要么昂贵，要么无法创建适当的结构。在这里，我们提出了一种通过使用改良的金属辅助化学蚀刻（MACE）方法来制造倒金字塔阵列的光刻方法。也可以通过这种方法来控制大小和中间的金字塔间距。我们在此过程中使用了各向同性化学蚀刻技术来控制蚀刻角度，从而导致该纳米结构的超低反射，甚至<0.5％。使用此规范，我们已经预测了超过兰伯特极限的预期太阳能电池参数。该报告提供了一种新的途径，以较低的成本提高超薄硅太阳能电池的效率。
Silicon inverted pyramids arrays have been suggested as one of the most promising structure for high-efficient ultrathin solar cells due to their ability of superior light absorption and low enhancement of surface area. However, the existing techniques for such fabrication are either expensive or not able to create appropriate structure. Here, we present a lithography free method for the fabrication of inverted pyramid arrays by using a modified metal assisted chemical etching (MACE) method. The size and inter-inverted pyramids spacing can also be controlled through this method. We used an isotropic chemical etching technique for this process to control the angle of etching, which leads to ultra-low reflection, even < 0.5%, of this nanostructure. Using this specification, we have predicted the expected solar cell parameters, which exceeds the Lambertian limit. This report provides a new pathway to improve the efficiency of the ultrathin silicon solar cells at lower cost.
