论文标题
机械剥落的光发射特性在六角硼果片中诱发的扩展缺陷
Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes
论文作者
论文摘要
最近,由于与缺陷相关的发光特性,HBN已成为量子光学元件的有趣平台。同时,HBN被确定为实现2D材料设备的理想绝缘支撑,相反,缺陷会影响设备的性能。在这项工作中,我们研究了通过机械去角质获得的HBN薄片的光发射特性,特别关注该过程中产生的扩展缺陷。特别是,我们解决了不同的问题,因为在数百个NM范围内的HBN薄片中的光发射揭示了薄片较薄的区域中更高水平发射的浓度更高。我们认识到薄片的某些区域中晶体变形的影响,其室温的重要蓝换灯(130 meV)在hbn带边缘发射附近,并在2.36 EV处同时存在与脱位阵列相关的新型发射。我们通过具有不同晶体学取向的厚度步骤的阴极发光和子带镜头激发光发光研究了光发射特性,从而揭示了不同浓度的辐射中心的存在。 CL映射允许检测SEM和AFM形态分析看不见的埋入厚度步骤。
Recently hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. Concomitantly, hBN was established as the ideal insulating support for realizing 2D materials device, where, on the contrary, defects can affect the device performance. In this work, we study the light emission properties of hBN flakes obtained by mechanical exfoliation with particular focus on extended defects generated in the process. In particular, we tackle different issues as the light emission in hBN flakes of different thicknesses in the range of hundreds of nm, revealing a higher concentration of deep level emission in thinner area of the flake. We recognize the effect of crystal deformation in some areas of the flake with an important blue-shift (130 meV) of the room temperature near band edge emission of hBN and the concurrent presence of a novel emission at 2.36 eV related to the formation of array of dislocations. We studied the light emission properties by means of cathodoluminescence and sub-bandgap excitation photoluminescence of thickness steps with different crystallographic orientations, revealing the presence of different concentration of radiative centers. CL mapping allows to detect buried thickness steps, invisible to the SEM and AFM morphological analysis.