论文标题
星空字节 - 单个事件的质子束测量值和ABCSTAR ASIC版本中的其他辐射效应0和1的ITK条带跟踪器的质量测量值
A Starry Byte -- proton beam measurements of single event upsets and other radiation effects in ABCStar ASIC Versions 0 and 1 for the ITk strip tracker
论文作者
论文摘要
单个事件效应（See） - 由粒子相互作用引起的电子产品中主要的位液 - 是在高辐射环境（例如Abcstar asics）中操作的ASIC的主要问题，例如Abcstar ASIC，该ASIC旨在将来在将来使用Atlas Itk Strip Tracker。因此，通过实现诸如三重模块冗余（TMR）之类的三重技术来优化芯片设计以保护它免受SEE的保护。为了验证芯片设计的辐射保护机理，通过将芯片暴露于高强度粒子束时，在监视观察到的SEU时，通过将芯片暴露于高强度的粒子束来测量单个事件Upsets（SEU）的横截面（SEUS）（SEUS）。这项研究介绍了使用480 MEV质子束的ABCSTAR ASIC（ABCSTAR V1）进行的设置，执行的测量以及SEU测试的结果。
Single Event Effects (SEEs) - predominately bit-flips in electronics caused by particle interactions - are a major concern for ASICs operated in high radiation environments such as ABCStar ASICs, which are designed to be used in the future ATLAS ITk strip tracker. The chip design is therefore optimised to protect it from SEEs by implementing triplication techniques such as Triple Modular Redundancy (TMR). In order to verify the radiation protection mechanisms of the chip design, the cross-section for Single Event Upsets (SEUs), a particular class of SEEs, is measured by exposing the chip to high-intensity particle beams while monitoring it for observed SEUs. This study presents the setup, the performed measurements, and the results from SEU tests performed using the latest version of the ABCStar ASIC (ABCStar V1) using a 480 MeV proton beam.
