论文标题
半导体BLOCH方程分析单层中的光学史塔克和布洛克 - siegert变化WSE $ _2 $和MOS $ _2 $
Semiconductor Bloch equation analysis of optical Stark and Bloch-Siegert shifts in monolayers WSe$_2$ and MoS$_2$
论文作者
论文摘要
我们报告了山谷选择性的光学鲜明和实验研究的理论和实验研究，这是单层$ _2 $和MOS $ _2 $的激子共振的旋转，这是由强圆极化的非谐振光场引起的。我们预测并观察线性相互作用方案中1SA和1SB激子跃迁的瞬态移位。理论描述基于半导体Bloch方程。方程的溶液是通过修改的扰动技术获得的，该技术考虑了多体库仑相互作用的效果。这些解决方案允许解释偏移的极化依赖性并通过分析计算其值。我们通过观察瞬态激子光谱的变化而在实验上发现了理论描述的适用性，这是由于驱动波的高场幅度的多体效应而导致的。
We report on the theoretical and experimental investigation of valley-selective optical Stark and Bloch-Siegert shifts of exciton resonances in monolayers WSe$_2$ and MoS$_2$ induced by strong circularly polarized nonresonant optical fields. We predict and observe transient shifts of both 1sA and 1sB exciton transitions in the linear interaction regime. The theoretical description is based on semiconductor Bloch equations. The solutions of the equations are obtained with a modified perturbation technique, which takes into account many-body Coulomb interaction effects. These solutions allow to explain the polarization dependence of the shifts and calculate their values analytically. We found experimentally the limits of the applicability of the theoretical description by observing the transient exciton spectra change due to many-body effects at high field amplitudes of the driving wave.
