论文标题
通过控制简单的Weyl Semimetal膜中的费米水平来最大化固有的异常霍尔效应
Maximizing intrinsic anomalous Hall effect by controlling the Fermi level in simple Weyl semimetal films
论文作者
论文摘要
起源于浆果曲率的大型固有的异常霍尔效应（AHE）引起了人们对潜在应用的越来越多的关注。最近提出的磁性Weyl Semimetal Eucd $ _2 $ SB $ _ {\ Mathrm {2}} $提供了一个很好的平台来控制固有的AHE，因为它仅托管Fermi Energy附近的Weyl-Points相关带结构。在这里，我们报告了EUCD $ _2 $ SB $ _ {\ MATHRM {2}} $单晶电影的制造，并通过电影技术对其异常霍尔效应的控制。同样，通过第一原理计算能量依赖性的内在霍尔电导率的计算，获得的异常霍尔效应显示出尖锐的峰值作为载体密度的函数，表明了内在AHE的明显能量依赖性。
Large intrinsic anomalous Hall effect (AHE) originating in the Berry curvature has attracted growing attention for potential applications. Recently proposed magnetic Weyl semimetal EuCd$_2$Sb$_{\mathrm{2}}$ provides an excellent platform for controlling the intrinsic AHE because it only hosts a Weyl-points related band structure near the Fermi energy. Here we report the fabrication of EuCd$_2$Sb$_{\mathrm{2}}$ single-crystalline films and control of their anomalous Hall effect by film technique. As also analyzed by first-principles calculations of energy-dependent intrinsic anomalous Hall conductivity, the obtained anomalous Hall effect shows a sharp peak as a function of carrier density, demonstrating clear energy dependence of the intrinsic AHE.
