论文标题
闸门可编程的范德华金属 - 弗罗伊特罗 - 触发器的记忆
A gate-programmable van der Waals metal-ferroelectric-semiconductor memory
论文作者
论文摘要
铁电性是实现不挥发电动极化的非易失性记忆的关键之一，它一直是二维（2D）极限的新兴现象。然而，使用2D铁电材料作为成分的范德华（VDW）记忆的演示非常有限。尤其是，在未来的神经形态应用中具有承诺的栅极可调铁电VDW回忆设备仍然具有挑战性。在这里，我们通过垂直组装石墨，cuinp2s6和MOS2层显示了原型栅极共编程的内存，将其显示为金属 - 弗洛电 - 触发器架构。所得的设备表现出两末端可切换的电阻，其开关比率超过105和长期保留，类似于常规的备忘录，但与Cuinp2S6层的铁电特性密切相关。通过控制顶门，可以将MOS2的费米级设置为其带隙的内部（外部），以淬灭（启用）回忆行为，从而产生一个三端门可编程的非挥发性VDW存储器。我们的发现为铁电介导的记忆的工程铺平了道路。
Ferroelecticity, one of the keys to realize nonvolatile memories owing to the remanent electric polarization, has been an emerging phenomenon in the two-dimensional (2D) limit. Yet the demonstrations of van der Waals (vdW) memories using 2D ferroelectric materials as an ingredient are very limited. Especially, gate-tunable ferroelectric vdW memristive device, which holds promises in future neuromorphic applications, remains challenging. Here, we show a prototype gate-programmable memory by vertically assembling graphite, CuInP2S6, and MoS2 layers into a metal-ferroelectric-semiconductor architecture. The resulted devices exhibit two-terminal switchable electro-resistance with on-off ratios exceeding 105 and long-term retention, akin to a conventional memristor but strongly coupled to the ferroelectric characteristics of the CuInP2S6 layer. By controlling the top gate, Fermi level of MoS2 can be set inside (outside) of its band gap to quench (enable) the memristive behaviour, yielding a three-terminal gate programmable nonvolatile vdW memory. Our findings pave the way for the engineering of ferroelectric-mediated memories in future implementations of nanoelectronics.
