论文标题
在半导体NB2Site4中直接可视化和操纵可调量子井状态4
Direct Visualization and Manipulation of Tunable Quantum Well State in Semiconducting Nb2SiTe4
论文作者
论文摘要
量子井状态（QWSS）可以在具有限制潜力的材料的表面或界面形成。它们在电子和光学设备中具有广泛的应用，例如高迁移率电子晶体管，光电探测器和量子井激光器。 QWS的性能通常是设备性能的关键因素。但是，这种状态的直接可视化和操纵通常具有挑战性。在这项工作中，通过使用角度分辨光发射光谱（ARPE）和扫描隧道显微镜/光谱法（STM/STS），我们直接探测了在狭窄的带隙半导体NB2SITE的真空界面上生成的QWSS。有趣的是，QWSS的位置和分裂可以通过钾（K）剂量轻松地在样品表面上操纵。我们的结果表明，NB2Site4是研究和设计QWSS的有趣的半导体系统，在设备应用中具有很大的潜力。
Quantum well states (QWSs) can form at the surface or interfaces of materials with confinement potential. They have broad applications in electronic and optical devices such as high mobility electron transistor, photodetector and quantum well laser. The properties of the QWSs are usually the key factors for the performance of the devices. However, direct visualization and manipulation of such states are in general challenging. In this work, by using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we directly probe the QWSs generated on the vacuum interface of a narrow band gap semiconductor Nb2SiTe4. Interestingly, the position and splitting of QWSs could be easily manipulated via potassium (K) dosage onto the sample surface. Our results suggest Nb2SiTe4 to be an intriguing semiconductor system to study and engineer the QWSs, which has great potential in device applications.
