论文标题
通过减压化学蒸气沉积增长的超高迁移率不稳定的量子量子
Undoped Strained Ge Quantum Well with Ultrahigh Mobility Grown by Reduce Pressure Chemical Vapor Deposition
论文作者
论文摘要
我们在30 nm GE0.8SI0.2浅层屏障的情况下制造了一个未凝固的GE量子，并具有反向分级技术。下屏障由GE0.8SI0.2沉积，然后是GE0.9SI0.1，因此GE含量的变化形成了尖锐的界面，可以抑制螺纹脱位密度渗透到未扎在未扎的GE量子中。 GE0.8SI0.2屏障在GE量子井中引入了足够的面内平行应力-0.41％。具有浅埋入通道的异质结构场效应晶体管在2e6 cm2/vs上以2.51 e-11 cm2的低渗透密度在2E6 cm2/vs上获得高二维孔气体（2DHG）迁移率。我们还发现了高密度和高磁场的可调分数量子厅效应。这种方法将紧张的锗定义为为快速且相干量子计算的自旋轨道耦合强度调整材料基础。
We fabricate an undoped Ge quantum well under 30 nm Ge0.8Si0.2 shallow barrier with reverse grading technology. The under barrier is deposited by Ge0.8Si0.2 followed by Ge0.9Si0.1 so that the variation of Ge content forms a sharp interface which can suppress the threading dislocation density penetrating into undoped Ge quantum well. And the Ge0.8Si0.2 barrier introduces enough in-plane parallel strain -0.41% in the Ge quantum well. The heterostructure field-effect transistors with a shallow buried channel get a high two-dimensional hole gas (2DHG) mobility over 2E6 cm2/Vs at a low percolation density of 2.51 E-11 cm2. We also discover a tunable fractional quantum Hall effect at high densities and high magnetic fields. This approach defines strained germanium as providing the material basis for tuning the spin-orbit coupling strength for fast and coherent quantum computation.
