论文标题
CMOS兼容多波段等离子TE通偏振层
CMOS compatible multi-band plasmonic TE-pass polarizer
论文作者
论文摘要
能够在O，E，S，C，L和U带中工作的CMOS兼容的等离子TE-PAS偏振器进行了数值分析。该设备基于具有分段金属设计的集成混合等离子波导（HPW）。分段的金属将避免限制在HPW插槽中的TM模式的传播，而TE基本模式将通过。 TE模式不受金属分割的影响，因为它限制在HPW的核心中。分段金属的概念可以在带有HPWS的等离子体电路中利用，因为电路部分之间的波导以及带有带状或平板波导的硅光子电路，连接了电路的不同部分。使用3D FDTD模拟，显示出5.5μm的长度差异比大于20 dB，并且插入损失损失在所有光学通信带上小于1.7 dB。
A CMOS-compatible plasmonic TE-pass polarizer capable of working in the O, E, S, C, L, and U bands is numerically analyzed. The device is based on an integrated hybrid plasmonic waveguide (HPW) with a segmented metal design. The segmented metal will avoid the propagation of the TM mode, confined in the slot of the HPW, while the TE fundamental mode will pass. The TE mode is not affected by the metal segmentation since it is confined in the core of the HPW. The concept of the segmented metal can be exploited in a plasmonic circuit with HPWs as the connecting waveguides between parts of the circuit and in a silicon photonics circuit with strip or slab waveguides connecting the different parts of the circuit. Using 3D FDTD simulations, it is shown that for a length of 5.5 μm the polarization extinction ratios are better than 20 dB and the insertion losses are less than 1.7 dB over all the optical communication bands.
