论文标题
在准二维Bisei电线中增强的光电性能和光学效果
Enhanced optoelectronic performance and photogating effect in quasi-one-dimensional BiSeI wires
论文作者
论文摘要
准二维（准1D）材料是低维研究中新出现的主题。由于尺寸降低和各向异性的增强，准1D结构产生了新的特性和有希望的应用，例如光电探测器。但是，当通道材料缩小尺寸时，是否会发生性能跨界，这仍然是一个悬而未决的问题。在这里，我们报告了基于去角质的准1D bisei细丝的光电探测器的制造和测试。与大量晶体上的设备相比，观察到了显着增强的光响应，这表现为一系列性能参数，包括超高的响应率（7 x 10 $^4 $ a w $ a w $^{ - 1} $），特定的检测率（2.5 x 10 $^{14} $ jones）和外部量子效率（$^7 $％）时（1.8 x 10 $^7 $^7 $^7 $％） {ds}} $ = 3 V，$λ$ = 515 nm和$ p $ = 0.01 mW cm $^{ - 2} $。常规的光导效应不太可能解释如此出色的光响应，这最终从增加的特定表面积和诱捕状态引起的光子效应方面被理解。这项工作为调制光电特性和准1D材料的性能提供了一个观点。
Quasi-one-dimensional (quasi-1D) materials are a newly arising topic in low-dimensional researches. As a result of reduced dimensionality and enhanced anisotropy, the quasi-1D structure gives rise to novel properties and promising applications such as photodetectors. However, it remains an open question whether performance crossover will occur when the channel material is downsized. Here we report on the fabrication and testing of photodetectors based on exfoliated quasi-1D BiSeI thin wires. Compared with the device on bulk crystal, a significantly enhanced photoresponse is observed, which is manifested by a series of performance parameters, including ultrahigh responsivity (7 x 10$^4$ A W$^{-1}$), specific detectivity (2.5 x 10$^{14}$ Jones) and external quantum efficiency (1.8 x 10$^7$%) when $V_{\textrm {ds}}$ = 3 V, $λ$ = 515 nm and $P$ = 0.01 mW cm$^{-2}$. The conventional photoconductive effect is unlikely to account for such a superior photoresponse, which is ultimately understood in terms of the increased specific surface area and the photogating effect caused by trapping states. This work provides a perspective for the modulation of optoelectronic properties and performance in quasi-1D materials.
